Project information
Physical properties of new materials and layered structures
- Project Identification
- MSM 143100002
- Project Period
- 1/1999 - 12/2004
- Investor / Pogramme / Project type
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Ministry of Education, Youth and Sports of the CR
- Research Intents
- MU Faculty or unit
- Faculty of Science
- Keywords
- semiconductors;low-dimensional structures;quantum dots;organic layers;ferroelectrics;high-temperature superconductors;ellipsometry;reflectometry;x-ray diffraction;x-ray reflection
Results
Publications
Total number of publications: 213
1995
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Elastic strains in GaAs/AlAs quantum dots studied by high-resolution x-ray diffraction
Physical Review B, year: 1995, volume: 52(1995), edition: 11
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Excition-polariton edge of GaAs: MBE layers between multiple-quantum-well structures
Solid State Communications, year: 1995, volume: 93(1995), edition: 9
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Grazing-incidence diffraction from multilayers
Physical Review B, year: 1995, volume: 51(1995), edition: 23
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Interface roughness in surface-sensitive x-ray methods
J. Phys. D: Appl. Phys., year: 1995, volume: 28, edition: -
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Interface study of W-Si/Si and obliquely deposided W/Si multilayers by grazing-incidence high-resolution x-ray diffraction
J. Phys. D: Appl. Phys., year: 1995, volume: 28, edition: -
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Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping
Semicond. Sci. Technol., year: 1995, volume: 10, edition: -
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Optical functions of the relaxed SiGe alloy and influence of strain
Silicon Germanium, year: 1995, number of pages: 11 s.
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Optical spectroscopy of SiGe
Silicon Germanium, year: 1995, number of pages: 5 s.
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Photoreflectance Study of a Fibonacci Superlattice
physica status solidi (b), year: 1995, volume: 190(1995), edition: 1995
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Strain relaxation and misfit dislocations in compositionally graded Si 1-x Ge x layers on Si (001)
Journal of Crystal Growth, year: 1995, volume: 1995, edition: 157