Perfect crystals grown from imperfect interfaces

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Authors	FALUB Claudiu Valentin MEDUŇA Mojmír CHRASTINA Daniel ISA Fabio MARZEGALLI Anna KREILIGER Thomas TABOADA Alfonso ISELLA Giovanni MIGLIO Leo DOMMANN Alex VON KAENEL Hans
Year of publication	2013
Type	Article in Periodical
Magazine / Source	Scientific Reports
MU Faculty or unit	Central European Institute of Technology
Citation
Web	http://www.nature.com/srep/2013/130724/srep02276/full/srep02276.html
Doi	http://dx.doi.org/10.1038/srep02276
Field	Solid matter physics and magnetism
Keywords	electronic devices; semiconductors; imaging techniques
Description	We prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily islocated interface.
Related projects:	Physical and chemical properties of advanced materials and structures CEITEC - Central European Institute of Technology Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery