Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

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This publication doesn't include Institute of Computer Science. It includes Central European Institute of Technology. Official publication website can be found on muni.cz.

Authors	ISA F. SALVALAGLIO M. DASILVA YAR. MEDUŇA Mojmír BARGET M. JUNG A. KREILIGER T. CANO I RUIZ Gisella ERNI R. PEZZOLI F. BONERA E. NIEDERMANN P. GRONING P. MONTALENTI F. VON KAENEL Hans
Year of publication	2016
Type	Article in Periodical
Magazine / Source	ADVANCED MATERIALS
MU Faculty or unit	Central European Institute of Technology
Citation
Web	http://onlinelibrary.wiley.com/doi/10.1002/adma.201504029/abstract
Doi	http://dx.doi.org/10.1002/adma.201504029
Field	Solid matter physics and magnetism
Keywords	heteroepitaxy; heterostructures; strain relaxation; SiGe; substrate patterning
Description	Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading.
Related projects:	CEITEC - Central European Institute of Technology Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies CEITEC - open access