Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source
| Authors | |
|---|---|
| Year of publication | 2017 |
| Type | Article in Periodical |
| Magazine / Source | Thin Solid Films |
| MU Faculty or unit | |
| Citation | |
| Doi | http://dx.doi.org/10.1016/j.tsf.2017.07.039 |
| Field | Solid matter physics and magnetism |
| Keywords | Ion-beam sputtering deposition; Kaufman ion-beam source; Titanium thin film; [001] preferential orientation; Residual stress; Rocking curve |
| Description | We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (1) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using X-ray diffraction and X-ray reflectivity measurements. We showed that the Ti film deposited at T approximate to 273 degrees C was stress free with corresponding lattice parameters.ao and co of (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c-axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from 0.58 nm to 0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems. (C) 2017 Elsevier B.V. All rights reserved. |
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