Optical characterization of inhomogeneous thin films containing transition layers using the combined method of spectroscopic ellipsometry and spectroscopic reflectometry based on multiple-beam interference model
| Authors | |
|---|---|
| Year of publication | 2019 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics |
| MU Faculty or unit | |
| Citation | |
| Web | https://doi.org/10.1116/1.5122014 |
| Doi | http://dx.doi.org/10.1116/1.5122014 |
| Keywords | Optical constants;Optical absorption;Reflectometry;Magnetron sputtering;Optical metrology;Thin films;Chemical vapor deposition;Optical properties |
| Description | This paper presents the results of the optical characterization of inhomogeneous thin films of polymer-like SiOxCyHz and non-stoichiometric silicon nitride SiNx. An efficient method combining variable angle spectroscopic ellipsometry and spectroscopic reflectometry applied at the near-normal incidence based on the multiple-beam interference model is utilized for this optical characterization. The multiple-beam interference model allows us to quickly evaluate the values of ellipsometric parameters and reflectance of the inhomogeneous thin films, which exhibit general profiles of their optical constants. The spectral dependencies of the optical constants of the inhomogeneous SiOxCyHz and SiNx thin films are determined using the Campi–Coriasso dispersion model. The profiles of the optical constants of these films can also be determined. Furthermore, the transition layers at the lower boundaries of the characterized films are also taken into account. Spectral dependencies of the optical constants of these transition layers are also determined using the Campi–Coriasso dispersion model. |
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