Strain relaxation and misfit dislocations in compositionally graded Si 1-x Ge x layers on Si (001)

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Authors	LI J.H. HOLÝ Václav
Year of publication	1995
Type	Article in Periodical
Magazine / Source	Journal of Crystal Growth
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Related projects:	Physical properties of new materials and layered structures