Electronic band structure of Sb2Te3
| Authors | |
|---|---|
| Year of publication | 2024 |
| Type | Article in Periodical |
| Magazine / Source | Physical Review B |
| MU Faculty or unit | |
| Citation | |
| web | https://doi.org/10.1103/PhysRevB.109.165205 |
| Doi | http://dx.doi.org/10.1103/PhysRevB.109.165205 |
| Keywords | Landau levels; Topological insulators; Narrow band gap systems; Cyclotron resonance |
| Attached files | |
| Description | We report on Landau-level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magnetotransport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the I' point or along the trigonal axis, and its width reaches Eg = (190 +/- 10) meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method. |
| Related projects: |