Deposition of DLC:Si(O) Films in Low Pressure Discharges

Investor logo

Warning

This publication doesn't include Institute of Computer Science. It includes Faculty of Science. Official publication website can be found on muni.cz.
Authors

ZAJÍČKOVÁ Lenka BURŠÍKOVÁ Vilma PEŘINA Vratislav MACKOVÁ Anna JANČA Jan

Year of publication 2001
Type Article in Proceedings
Conference Proceedings of 13th Symposium on Application of Plasma Processes
MU Faculty or unit

Faculty of Science

Citation
Field Plasma physics
Keywords DLC; Plasma Enhanced CVD; RF Discharges;
Description Study of the properties of silicon doped DLC films deposited in rf low pressure discharges. Investigation of the influence of the deposition parameters on the film properties.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.

More info