Electronic Structure and Optical Properties of InAs/GaAs Quantum Dots

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Authors	KŘÁPEK Vlastimil FIKAR Jan HUMLÍČEK Josef
Year of publication	2004
Type	Article in Proceedings
Conference	WDS'04 Proceedings of contributed papers
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	quantum dot; InAs; GaAs; optical transition; effective mass; single-band
Description	The approximative single-band effective mass model for calculating the electronic structure and optical properties of flat quantum dots was introduced. The comparison with more accurate model has shown the applicability of the approximations. The method has proved to be adequate for the interpretation of the experimental data.
Related projects:	Physical properties of new materials and layered structures