X-ray Diffuse Scattering from Defects in Nitrogen-doped Czochralski Grown Silicon Wafers
| Authors | |
|---|---|
| Year of publication | 2004 |
| Type | Article in Proceedings |
| Conference | Proceedings of The Ninth Scientific and Business Conference SILICON 2004 |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | X-ray; Diffuse Scattering; Defect; Silicon; Nitrogen doping |
| Description | We have studied nitrogen-doped silicon wafers (001) using triple-axis high-resolution X-ray diffraction (HRXRD). The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space map determines the type of dislocation loops and from cross section we can determine their radius and concentration. These parameters were combined with the results from infrared absorption spectroscopy method. |
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