PtSi formation on silicon substrate
| Authors | |
|---|---|
| Year of publication | 2004 |
| Type | Article in Proceedings |
| Conference | 22nd European Crystallographic Meeting, Abstracts |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | PtSi; silicide; x-ray diffraction; |
| Description | Silicidation of Pt layer deposited on Silicon substrate has been studied by in-situ x-ray diffraction. From the kinetics of Pt2Si and PtSi formation using Kissinger analysis the activation energies has been calculated. It has bee found that silicidation is strongly influenced by the presence of nitrogen in annealing ambient. |
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