Optical characterization of non-stoichiometric silicon nitride films

Warning

This publication doesn't include Institute of Computer Science. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	NEČAS David PEŘINA Vratislav FRANTA Daniel OHLÍDAL Ivan ZEMEK Josef
Year of publication	2008
Type	Article in Periodical
Magazine / Source	physica status solidi (c)
MU Faculty or unit	Faculty of Science
Citation
Field	Optics, masers and lasers
Keywords	ellipsometry; spectrophotometry; silicon nitride; stoichiometry; optical constants
Description	Characterizations of non-stoichiometric silicon nitride films prepared by PECVD method onto silicon single crystal substrates are performed using variable angle spectroscopic ellipsometry and spectroscopic reflectometry and Rutherford backscattering spectrometry (RBS). The optical characterization employs a dispersion model based on the parameterization of the density of electronic states of the valence and conduction bands. The thin overlayers onto the upper boundaries of the films are taken into account. The values of the dispersion parameters of the SiNx films and thicknesses of these films and overlayers are determined. The ratios of Si and N atomic fractions in the individual films are evaluated using RBS. The results from the optical method and RBS are correlated.
Related projects:	Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface Analýza optických vlastností solárních článků