Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study

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Authors	LI Jianhua STOKES Donna W. WICKETT J. C. CAHA Ondřej BASSLER Kevin E. MOSS Simon C.
Year of publication	2010
Type	Article in Periodical
Magazine / Source	Journal of Applied Physics
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	layer superlattices; diffusion; lattice
Description	We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the IFs. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.
Related projects:	Physical and chemical properties of advanced materials and structures