Study of oxide precipitates in silicon using X-ray diffraction techniques

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Authors	CAHA Ondřej BERNATOVÁ Silvie MEDUŇA Mojmír SVOBODA Milan BURŠÍK Jiří
Year of publication	2011
Type	Article in Periodical
Magazine / Source	physica status solidi (a), Applied research
MU Faculty or unit	Central European Institute of Technology
Citation
Doi	http://dx.doi.org/10.1002/pssa.201184263
Field	Solid matter physics and magnetism
Keywords	CZOCHRALSKI-GROWN SILICON; DIFFUSE-SCATTERING; DEFECTS
Description	The results of a study of oxide precipitates in Czochralski (CZ) grown silicon using two X-ray diffraction methods are reported. The diffuse scattering around the Bragg diffraction maxima was measured on a series of samples after various two-stage annealing treatment. Combining the analysis of diffuse scattering with other experimental techniques we were able to determine mean precipitate size and deformation field around the precipitates. The obtained data show that the deformation field is proportional to the precipitate volume and independent on the annealing temperature or annealing time. The dynamical diffraction in Laue geometry was used to measure precipitate concentration. The results are compared to the selective etching concentration measurement.
Related projects:	Physical and chemical properties of advanced materials and structures Nucleation and growth of oxygen precipitates in silicon Strain engineering in diluted magnetic semiconductors Struktura, elektronová struktura a optická odezva pokročilých materiálů CEITEC - Central European Institute of Technology