Surface morphology and magnetic anisotropy in (Ga,Mn)As

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Authors	PIANO S. MARTI X. RUSHFORTH A. W. EDMONDS K. W. CAMPION R. P. WANG M. CAHA Ondřej SHUELLI T. U. HOLÝ Václav GALLAGHER B. L.
Year of publication	2011
Type	Article in Periodical
Magazine / Source	Applied Physics Letters
MU Faculty or unit	Faculty of Science
Citation
Doi	http://dx.doi.org/10.1063/1.3579534
Field	Solid matter physics and magnetism
Keywords	atomic force microscopy; ferromagnetic materials; gallium arsenide; III-V semiconductors
Description	Atomic force microscopy and grazing incidence x-ray diffraction measurements have revealed the presence of ripples, aligned along the [1 -1 0] direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.
Related projects:	Physical and chemical properties of advanced materials and structures Strain engineering in diluted magnetic semiconductors