Activation of silicon surface in atmospheric oxygen plasma
| Autoři | |
|---|---|
| Rok publikování | 2012 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | CHEMICKÉ LISTY |
| Fakulta / Pracoviště MU | |
| Citace | |
| Obor | Fyzika plazmatu a výboje v plynech |
| Klíčová slova | DCSBD; Si wafer; activation; oxygen plasma |
| Popis | In this contribution, the surface modification of crystalline silicon surface in oxygen atmosphere was investigated. Moreover the effect of crystallographic orientation and surface pre-cleaning of silicon surface were studied. c-Si wafers (100) and (111) oriented were cleaned in isopropyl alcohol or etched in HF solution and afterwards treated in Diffuse Coplanar Surface Barrier Discharge. Wettability, changes of surface properties and ageing effect of plasma treated surface were studied by means of contact angle measurement. It was proved, that modification of c-Si surface in oxygen plasma improve the wettability independent on crystallographic orientation and initial cleaning process. |
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