Physical Vapour Deposition of As-Te glass layers and Mass Spectrometry analysis
| Autoři | |
|---|---|
| Rok publikování | 2015 |
| Druh | Konferenční abstrakty |
| Fakulta / Pracoviště MU | |
| Citace | |
| Popis | The aim of this work is to introduce the preparation and analysis of chalcogenide glass thin films. Chalcogenide glasses show remarkable optical or physico-chemical properties and are finding applications in electronics, computer technology, optoelectronics, optical modulation, energy generation, and optical sensors. Arsenic tellurium glassy layers were prepared via Physical Vapour Deposition (PVD) – thermal evaporation from As-Te mixtures. Interaction of tellurium with arsenic was studied via laser ablation synthesis using Laser Desorption Ionisation Time of Flight Mass Spectrometry (LDI TOF MS) which has a high potential for generation of new compounds. Clusters of As-Te were generated using nitrogen laser while stoichiometry of AsmTen was determined via analysis of isotopic envelopes and computer modeling. Scanning Electron Microscope (SEM) was used for characterization the topology of deposited layers and Energy Dispersive X-ray spectroscopy (EDX) was used for evaluation the distribution of arsenic and tellurium in layer. Laser ablation synthesis with LDI TOF MS shows formation of AsmTen clusters. Distribution of arsenic and tellurium in cross section of layer was homogenous. New As-Te glass layers were manufactured and analyzed. Determined stoichiometry of As-Te clusters might inspire the development of new chalcogenide materials. |
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