Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

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Publikace nespadá pod Ústav výpočetní techniky, ale pod Přírodovědeckou fakultu. Oficiální stránka publikace je na webu muni.cz.
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KOTILAINEN Minna Paula Katriina KRUMPOLEC Richard FRANTA Daniel SOUČEK Pavel HOMOLA Tomáš CAMERON David Campbell VUORISTO Petri

Rok publikování 2017
Druh Článek v odborném periodiku
Časopis / Zdroj Solar Energy Materials and Solar Cells
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www http://www.sciencedirect.com/science/article/pii/S0927024817300958
Doi http://dx.doi.org/10.1016/j.solmat.2017.02.033
Obor Fyzika pevných látek a magnetismus
Klíčová slova Solar absorber;Diffusion barrier;Thermal ageing;Copper diffusion;HfO2 thin film
Popis The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.
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