Amorphous gallium oxide grown by low-temperature PECVD

Varování

Publikace nespadá pod Ústav výpočetní techniky, ale pod Přírodovědeckou fakultu. Oficiální stránka publikace je na webu muni.cz.

Autoři	KOBAYASHI Eiji BOCCARD Mathieu JEANGROS Quentin RODKEY Nathan VRESILOVIC Daniel HESSLER-WYSER Aicha DÖBELI Max FRANTA Daniel DE WOLF Stefaan MORALES-MASIS Monica BALLIF Christophe
Rok publikování	2018
Druh	Článek v odborném periodiku
Časopis / Zdroj	Journal of Vacuum Science and Technology A
Fakulta / Pracoviště MU	Přírodovědecká fakulta
Citace
www	http://dx.doi.org/10.1116/1.5018800
Doi	http://dx.doi.org/10.1116/1.5018800
Klíčová slova	Chemical compounds; Optical properties; Thin films; Electron energy loss spectroscopy; Physics of gases
Popis	Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, theauthors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200°C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
Související projekty:	Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy