Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering
| Autoři | |
|---|---|
| Rok publikování | 2025 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Surface and Coatings Technology |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | https://www.sciencedirect.com/science/article/pii/S0257897225001392 |
| Doi | http://dx.doi.org/10.1016/j.surfcoat.2025.131865 |
| Klíčová slova | Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown |
| Popis | This research aims to study the structure, chemical composition, and dielectric strength of aluminum tantalum oxide (AlxTayOz) thin films deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering. Four targets containing different concentrations of aluminum and tantalum are sputtered in an argon-oxygen atmosphere to produce ternary oxide thin films of AlxTayOz. Argon flow is maintained at 60 sccm during the depositions, and several oxygen flows ranging from 5.0 to 39.6 sccm are studied. The change in oxygen flow rate modifies the structure, chemical composition, and dielectric strength of the deposited oxide thin films. The deposition rate of the films is impacted as well. All these properties are also studied for aluminum oxide (AlxOz) and tantalum oxide (TayOz) thin films deposited in the same experimental conditions as a reference. The binary and ternary oxide thin films are dense, uniform, and poorly crystalline. The concentrations of aluminum, tantalum, and oxygen in the thin films depend on both the sputtered target composition and the oxygen flow utilized during deposition. The dielectric strength of the thin films is also oxygen flow dependent. Intermediate oxygen flows are the most efficient to produce AlxTayOz thin films with high dielectric strengths. The highest dielectric strength of 340 ± 50 V·µm-1 was obtained for 90 at.% Al/10 at.% Ta target composition and 20 sccm O2 flow. The experimental results show that the increased tantalum content in the sputtered target mitigates the effect of poisoning and arcing and increases the deposition rate of AlxTayOz thin films. |
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