Nitrogen in Czochralski-grown silicon
| Autoři | |
|---|---|
| Rok publikování | 2002 |
| Druh | Článek ve sborníku |
| Konference | SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský |
| Fakulta / Pracoviště MU | |
| Citace | |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | silicon; nitrogen |
| Popis | Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectroscopy (SIMS) are used to study nitrogen-doped Czochralski-grown (CZ) crystal. We observe nitrogen-related vibrational modes typical for CZ silicon and estimate nitrogen content to be 1.6x10^15 cm-3 from its quantitative analysis. This value is in a good agreement with result of 2.4x10^15 cm-3 from calculations assuming constant segregation coefficient 7x10^(-4). On the other hand, SIMS measurements give much higher value of 8.3x10^15 cm-3. Only 4-5% of nitrogen occupy substitutional sites. We also observe an obstruction of dislocation movement during crystal cooling. |
| Související projekty: |