Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
| Autoři | |
|---|---|
| Rok publikování | 2010 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Applied Physics Letters |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://link.aip.org/link/?APL/97/203107 |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | band structure; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; photoluminescence; red shift; semiconductor quantum dots |
| Popis | The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field. |
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