Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation
| Autoři | |
|---|---|
| Rok publikování | 2011 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | physica status solidi (c) |
| Fakulta / Pracoviště MU | |
| Citace | |
| Doi | http://dx.doi.org/10.1002/pssc.201000301 |
| Obor | Fyzika plazmatu a výboje v plynech |
| Klíčová slova | Deuterium; Hydrogen; Radiation defects; Silicon |
| Popis | Interaction of hydrogen and deuterium with radiation defects introduced by irradiation with high-energy alphas was investigated in the low-doped float zone and Czochralski silicon forming the base of p+nn+ diodes. To create localized defect layer, diodes were first irradiated with 2.4 MeV alphas to a fluence of 1x1010 cm-2. Then, hydrogen or deuterium was introduced by rf plasma treatment at 250 C and diodes were isochronally annealed at temperatures ranging from 100 to 400 C. Reactions of hydrogen and deuterium with radiation defects were monitored by deep-level transient spectroscopy. Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related defects created by alpha-particle irradiation in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy-related defect levels due to hydrogen (deuterium) is accompanied by introduction of two dominant deep levels at EC-0.309 eV and EC-0.365 eV. While hydrogenation significantly accelerates annealing of radiation defects, deuteration has weaker effect and gives rise to new defect levels during annealing. |
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