Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain

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Authors	PLUMHOF JD. TROTTA R. KŘÁPEK Vlastimil ZALLO E. ATKINSON P. KUMAR S. RASTELLI A. SCHMIDT OG.
Year of publication	2013
Type	Article in Periodical
Magazine / Source	Physical Review B
MU Faculty or unit	Faculty of Science
Citation
Web	Full Text
Doi	http://dx.doi.org/10.1103/PhysRevB.87.075311
Keywords	SINGLE-HOLE SPIN
Description	This work presents an experimental method to tune the degree of heavy-hole (HH) and light-hole (LH) mixing of the ground state of quantum dots (QDs). A ferroelectric crystal is used to apply reversible anisotropic biaxial stress to thin nanomembranes, containing GaAs/AlGaAs QDs. The stress-induced modification of the QD anisotropy leads to a change of the relative intensity of the two emission lines produced by the recombination of neutral bright excitonic states. Such a change is ascribed to a variation of the degree of HH-LH mixing. At the same time the modified anisotropy produces a change of the excitonic fine structure splitting (FSS). Model calculations provide a qualitative insight into the relation between strain, HH-LH mixing, and the FSS in epitaxial GaAs/AlGaAs QDs.
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