Project information
Vliv krycích vrstev na elektronové stavy v kvantových tečkách

Information

This project doesn't include Institute of Computer Science. It includes Faculty of Science. Official project website can be found on muni.cz.

Project Identification

GA202/09/0676

Project Period

1/2009 - 12/2011

Investor / Pogramme / Project type

Czech Science Foundation

Standard Projects

MU Faculty or unit

Faculty of Science

prof. Mgr. Dominik Munzar, Dr.

Cooperating Organization

Institute of Physics of the ASCR, v. v. i.

Responsible person Jiří Oswald

Publications

Total number of publications: 8

2013

Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain

PLUMHOF JD. TROTTA R. KŘÁPEK Vlastimil ZALLO E. ATKINSON P. KUMAR S. RASTELLI A. SCHMIDT OG.

Article in Periodical

Physical Review B, year: 2013, volume: 87, edition: 7, DOI

2011

ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS

HUMLÍČEK Josef KLENOVSKÝ Petr MUNZAR Dominik

Article in Proceedings

3rd International Conference on NANOCON, year: 2011
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime

HOSPODKOVÁ Alice PANGRÁC J. VYSKOČIL J. OSWALD J. VETUSHKA A. CAHA Ondřej HAZDRA P. KULDOVÁ K. HULICIUS E.

Article in Periodical

Journal of crystal growth, year: 2011, volume: 317, edition: 1, DOI
Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots

PLUMHOF Johannes David KŘÁPEK Vlastimil DING Fei JOENS K. D. HAFENBRAK R. KLENOVSKÝ Petr HERKLOTZ A. DORR K. MICHLER P. RASTELLI Armando SCHMIDT Oliver G.

Article in Periodical

Physical Review B, year: 2011, volume: 83, edition: 12, DOI

2010

Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

KLENOVSKÝ Petr KŘÁPEK Vlastimil MUNZAR Dominik HUMLÍČEK Josef

Article in Periodical

Applied Physics Letters, year: 2010, volume: 97, edition: 203107
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

HOSPODKOVÁ A. HULICIUS E. PANGRÁC J. OSWALD J. VYSKOČIL J. KULDOVÁ K. ŠIMEČEK T. HAZDRA P. CAHA Ondřej

Article in Periodical

Journal of crystal growth, year: 2010, volume: 312, edition: 8
Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer

KLENOVSKÝ Petr KŘÁPEK Vlastimil MUNZAR Dominik HUMLÍČEK Josef

Article in Periodical

Journal of Physics: Conference Series, year: 2010, volume: 244, edition: 012086
Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules

KŘÁPEK Vlastimil KLENOVSKÝ Petr RASTELLI Armando SCHMIDT Oliver G MUNZAR Dominik

Article in Periodical

Journal of Physics: Conference Series, year: 2010, volume: 245, edition: 012027