Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules
| Authors | |
|---|---|
| Year of publication | 2010 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Physics: Conference Series |
| MU Faculty or unit | |
| Citation | |
| Web | http://iopscience.iop.org/1742-6596/245/1/012027 |
| Field | Solid matter physics and magnetism |
| Keywords | Excitons and related phenomena; Tunneling; Quantum dots; Semiconductor compounds |
| Description | We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots. |
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