InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
| Authors | |
|---|---|
| Year of publication | 2011 |
| Type | Article in Periodical |
| Magazine / Source | Journal of crystal growth |
| MU Faculty or unit | |
| Citation | |
| Doi | http://dx.doi.org/10.1016/j.jcrysgro.2010.12.076 |
| Field | Solid matter physics and magnetism |
| Keywords | Low dimensional structures; Photoluminescence; Low-pressure metalorganic vapor phase epitaxy; InAs/GaAs quantum dots; Semiconducting III-V materials |
| Description | InAs/GaAs quantum dot (QD) properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group III partial pressure in the reactor on the QD capping process and on the QD photoluminescence when the capping layer is grown under the kinetically limited regime. Two types of capping layers were prepared: GaAs and InGaAs. The GaAs capping layer growth rate decrease did not influence QD dissolution, but increased the dissolution of big hillocks. Influence of the GaAs capping layer thickness on QD photoluminescence is also demonstrated. The composition of the ternary strain reducing InGaAs capping layer can be considerably changed depending on the V/III ratio under kinetically limited growth. |
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