High-resolution x-ray diffraction on self-organized step bunches of Si<sub>1-x</sub>Ge<sub>x</sub> grown on (113)-oriented Si

Warning

This publication doesn't include Institute of Computer Science. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	STANGL J. HOLÝ Václav DARHUBER A.A. MIKULÍK Petr BAUER G. ZHU J. BRUNNER K. ABSTREITER G.
Year of publication	1999
Type	Article in Periodical
Magazine / Source	J. Phys. D: Appl. Phys.
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Description	We present investigations of a highly regular terraced surface and interface structure of Si/SiGe multilayers on Si(113) by x-ray diffraction, x-ray reflectivity and atomic force microscopy. A regular array of step bunches with lateral periods of several hundred nanometres is formed during the growth of the Si/Si1-xGex multilayers. X-ray diffraction patterns are simulated using the elastic Green function approach for the evaluation of the strain fields associated with the step edges, taking into account the relaxation towards the free surface. In addition to the terrace structure, a surface waviness on the micrometer length scale is present, leading to a modulation of the terrace widths.
Related projects:	Physical properties of new materials and layered structures