High-resolution x-ray diffraction on self-organized step bunches of Si_1-xGe_x grown on (113)-oriented Si

• Autoři: STANGL J.; HOLÝ Václav; DARHUBER A.A.; MIKULÍK Petr; BAUER G.; ZHU J.; BRUNNER K.; ABSTREITER G.
• Rok publikování: 1999
• Druh: Článek v odborném periodiku
• Časopis / Zdroj: J. Phys. D: Appl. Phys.
• Fakulta / Pracoviště MU: Přírodovědecká fakulta
• Obor: Fyzika pevných látek a magnetismus
• Popis: We present investigations of a highly regular terraced surface and interface structure of Si/SiGe multilayers on Si(113) by x-ray diffraction, x-ray reflectivity and atomic force microscopy. A regular array of step bunches with lateral periods of several hundred nanometres is formed during the growth of the Si/Si1-xGex multilayers. X-ray diffraction patterns are simulated using the elastic Green function approach for the evaluation of the strain fields associated with the step edges, taking into account the relaxation towards the free surface. In addition to the terrace structure, a surface waviness on the micrometer length scale is present, leading to a modulation of the terrace widths.

Související projekty

• Fyzikální vlastnosti nových materiálů a vrstevnatých struktur