WO3 thin films grown on Si substrates: potential high Tc ferromagnetic semiconductors

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Authors	PHAM Sy Nguyen NGUYEN Hoa Hong
Year of publication	2024
Type	Article in Periodical
Magazine / Source	Applied Physics A
MU Faculty or unit	Faculty of Science
Citation
Web	https://link.springer.com/article/10.1007/s00339-024-08038-w
Doi	http://dx.doi.org/10.1007/s00339-024-08038-w
Keywords	Magnetic semiconductors; Room temperature ferromagnetism; Oxide thin films; Defects; Oxygen vacancies
Description	Well-defined ferromagnetism (FM) with a very high Tc of about 800 K was found in laser-ablated WO3 films grown on Si wafer substrates. It seems that the observed magnetism is surface related, and oxygen vacancies might play an important role in inducing FM into these oxide semiconductors. The very high Tc FM is observed for the first time in nanosized-WO3, indicating a great potential for spintronic applications.
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