Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires

Warning

This publication doesn't include Institute of Computer Science. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	HOLY V. ROCH T. STANGL J. BAUER G.
Year of publication	2001
Type	Article in Periodical
Magazine / Source	Phys. Rev. B
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	KINETIC GROWTH INSTABILITIES; VICINAL SI(001) SURFACES; STEPPED INTERFACES; GE ISLANDS; MULTILAYERS; DIFFRACTION; SI(113); STRAIN
Description	The structure of self-organized quantum wires buried at the interfaces of a SiGe/Si multilayer is investigated by grazing incidence small-angle x-ray scattering. A nearly periodic distribution of wires, well described by a short-range ordering model, gives rise to intensity satellite maxima in reciprocal space. The shape of the wire cross section is determined from the heights of these intensity maxima, and the analysis reveals that the conventional step-bunching model is not sufficient to explain the wire shape.
Related projects:	Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices