Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots

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Authors	HUMLÍČEK Josef OSWALD Jiří MUNZAR Dominik PANGRÁC Jiří NAVRÁTIL Karel HULICIUS Eduard LORENC Michal
Year of publication	2002
Type	Article in Periodical
Magazine / Source	Physica E
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	self-assembled quantum dots; photoluminescence; polarization anisotropy
Description	We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots.
Related projects:	Quantum dots in III - V semiconductors Physical properties of new materials and layered structures