Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)

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Authors	HESSE Anke STANGL Julian HOLÝ Václav
Year of publication	2002
Type	Article in Periodical
Magazine / Source	Physical Review B
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	Effect of overgrowth on shape; composition; and strain of SiGe islands on Si(001)
Description	Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
Related projects:	Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices Physical properties of new materials and layered structures