Annealing studies of high Ge composition Si/SiGe multilayers

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Authors	MEDUŇA Mojmír NOVÁK Jiří HOLÝ Václav BAUER Günther FALUB Claudiu TSUJINO Soichiro MÜLLER Elisabeth GRÜTZMACHER Detlev CAMPIDELLI Yves KERMARREC Olivier BENSAHEL Daniel
Year of publication	2004
Type	Article in Periodical
Magazine / Source	Zeitschrift fur Kristalographie
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	Reflectivity; X-ray diffraction; Annealing; Diffusion; Si/SiGe multiple quantum wells
Description	Temperature stability of SiGe/Si (80% Ge) multilayers was studied using x-ray reflectivity during in-situ annealing at temperature 810C.
Related projects:	Physical properties of new materials and layered structures