Structural studies of strain-symmetrised Si/SiGe structures grown by molecular beam epitaxy
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Periodical |
| Magazine / Source | Journal of crystal growth |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | High-resolution X-ray diffraction; Multiple quantumwell structures; Molecular beamepitaxy; Si/SiGe |
| Description | We present recent achievements on the low-temperature (300 C) molecular beam epitaxial growth of high Ge content Si/SiGe modulation-doped multiple quantum well structures on Si0.5Ge0.5 pseudosubstrates. Highresolution X-ray reflectivity and diffraction experiments performed at the Swiss Light Source synchrotron, as well as analysis by transmission electron microscopy, showed very good control of the growth parameters and interface r.m.s. roughness as low as 0.4 nm. |
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