Nucleation and Precipitation of Interstitial Oxygen in Czochralski Silicon

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Authors	ŠTOUDEK Richard KLANG Pavel KUBĚNA Alan KUBĚNA Josef
Year of publication	2006
Type	Article in Proceedings
Conference	Proceedings of The Tenth Scientific and Business Conference SILICON 2006
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	Nucleation; Precipitation; Interstitial oxygen; Silicon; Infrared absorption
Description	Infrared absorption spectroscopy has been applied to study interstitial oxygen (Oi) and oxygen precipitates in a series of multi-step annealed silicon samples. We have adopted Ham's theory of diffusion-limited precipitation. Then we have been able to determine concentration of the oxygen precipitates in the samples from decrease of Oi concentration during the high temperature annealing. We have also used triple-axis high-resolution x-ray diffraction to measure reciprocal space maps of these samples.
Related projects:	Physical and chemical properties of advanced materials and structures