Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing

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Authors	KUBĚNA Josef KUBĚNA Alan CAHA Ondřej MEDUŇA Mojmír
Year of publication	2009
Type	Article in Periodical
Magazine / Source	J.Phys.: Condens. Matter
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	Silicon; vacancies; Interstitials; nucleation
Description	The kinetics of the vacancy and self interstitial processes in Si wafers are studied in this paper. Detailed insight into nucleation processes, out diffusion and vacancy interstitial recombination during the RTA leads to a new model of interaction between vacancies and oxygen.
Related projects:	Physical and chemical properties of advanced materials and structures Nucleation and growth of oxygen precipitates in silicon