Thermal stability of partially crystalline Nb/Si multilayers
| Autoři | |
|---|---|
| Rok publikování | 2001 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | J. Phys. D: Appl. Phys. |
| Fakulta / Pracoviště MU | |
| Citace | |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | Thermal stability; x-ray reflection; interdiffusion; multilayers |
| Popis | The thermal stability of [Nb(6.0 nm)/Si(2.0 nm)*50 (*100) multilayers with partially crystalline Nb sublayer deposited onto an (001) oxidized Si wafer has been studied by in situ x-ray reflectivity, ex situ x-ray diffraction, transmission electron microscopy and measurement of low temperature resistivity in annealing at the temperature range up to 450degC. It has been shown that the annealing leads to interface shift without any significant change of interface roughness, which was explained by the diffusion of Si atoms into Nb sublayer. The densification of the multilayer was attributed to creation of Nb3Si phase at Nb/Si interface; presence of this phase was proved by electron diffraction. Annealing up to 250degC has practically no influence on superconductivity of the system though the structure changes are well detectable. |
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