DEPOSITION OF THIN FILMS IN ATMOSPHERIC PRESSURE HOMOGENEOUS DISCHARGE
| Authors | |
|---|---|
| Year of publication | 2008 |
| Type | Article in Proceedings |
| Conference | Proccedings of HAKONE X |
| MU Faculty or unit | |
| Citation | |
| Field | Plasma physics |
| Keywords | electrical discharge; atmospheric pressure; nitrogen |
| Description | The atmospheric pressure homogeneous discharge was used for the deposition of thin organosilicon polymer films. The discharge was burning in pure nitrogen used as a carrier gas and a small admixture of hexamethyldisiloxane which was used as a monomer. The temperature of the substrate was elevated up to 120 C to obtain harder thin films. The homogeneity of thin films was enhanced using movable upper electrode. Electrical measurements were used to distinguish between homogeneous and filamentary regime. Mechanical properties of deposited films were characterized by depth sensing indentation technique. The films were polymer-like, transparent in visible range, with uniform thickness and without pinholes. |
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